Компонент | Описание | Производитель | PDF | Buy |
SMG30 | Voltage-Controlled Attenuator Module 100 to 2000 MHz | Tyco Electronics | | |
SMG30 | Voltage-Controlled Attenuator Module 100 to 2000 MHz | M/A-COM Technology Solutions, Inc. | | |
SMG3018K | N-Channel Enhancement Mode Power Mos.FET | SeCoS Halbleitertechnologie GmbH | | |
SMG3314 | P-Channel Enhancement Mode Power Mos.FET | SeCoS Halbleitertechnologie GmbH | | |
SMG3400 | N-Channel Enhancement Mode Power Mos.FET | SeCoS Halbleitertechnologie GmbH | | |
SMG3401 | P-Channel Enhancement Mode Power Mos.FET | SeCoS Halbleitertechnologie GmbH | | |
SMG3403 | P-Channel Enhancement Mode Power Mos.FET | SeCoS Halbleitertechnologie GmbH | | |
SMG3403A | P-Channel Enhancement Mode Power Mos.FET | SeCoS Halbleitertechnologie GmbH | | |
SMG3407 | P-Channel Enhancement Mode Power Mos.FET | SeCoS Halbleitertechnologie GmbH | | |
ESMG350ELL101MF11D | TPS84250EVM-001 2.5-A, Integrated Power Solution | Texas Instruments | | |
SMG351AN | N-Channel Enhancement Mode Power Mos.FET | SeCoS Halbleitertechnologie GmbH | | |
VSMG3700 | High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero | Vishay Siliconix | | |
VSMG3700 | High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero | Vishay Siliconix | | |
VSMG3700-GS08 | High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero | Vishay Siliconix | | |
VSMG3700-GS08 | High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero | Vishay Siliconix | | |
VSMG3700-GS18 | High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero | Vishay Siliconix | | |
VSMG3700-GS18 | High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero | Vishay Siliconix | | |
VSMG3700_10 | High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero | Vishay Siliconix | | |
SMG3D60C | THYRISTOR(Through Hole/Non-isolated) | SanRex Corporation | | |
SMG3D60D | THYRISTOR(Surface Mount Device/Non-isolated) | SanRex Corporation | | |