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| SS3060 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
SS3060 | 30AMP Schottky Barrier Rectifiers | SeCoS Halbleitertechnologie GmbH |  |  |
| *SS306*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| 1SS306 | DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APLICATIONS) | Toshiba Semiconductor | | |
| 1SS306 | High Voltage, High Speed Switching Applications | Toshiba Semiconductor | | |
| 1SS306 | Silicon Epitaxial Planar Type | Guangdong Kexin Industrial Co.,Ltd | | |
| DSS306-351Y5S101M100 | FERRITE BEAD INDUCTORS, EMI SUPPRESSION FILTER COMPACT DISC-TYPE | Murata Manufacturing Co., Ltd. | | |
| SS3060 | 30AMP Schottky Barrier Rectifiers | SeCoS Halbleitertechnologie GmbH | | |
| SS3060-HE | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | Pan Jit International Inc. | | |
| BSS306N | OptiMOS2 Small-Signal-Transistor | Infineon Technologies AG | | |
| PBSS306NX | 100 V, 4.5 A NPN low VCEsat (BISS) transistor | NXP Semiconductors | | |
| PBSS306NZ | 100 V, 5.1 A NPN low VCEsat (BISS) transistor | NXP Semiconductors | | |
| PBSS306PX | 100 V, 3.7 A PNP low VCEsat (BISS) transistor | NXP Semiconductors | | |
| PBSS306PZ | 100 V, 4.1 A PNP low VCEsat (BISS) transistor | NXP Semiconductors | | |
| 1SS306_07 | High Voltage, High Speed Switching Applications | Toshiba Semiconductor | | |
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