| Компонент | Описание | Производитель | PDF | Buy |
| TC55VBM316ASTN40 | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | Toshiba Semiconductor |  |  |
| TC55VCM216ASTN40 | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | Toshiba Semiconductor | | |
| TC55VEM208ASTN40 | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | Toshiba Semiconductor | | |
| TC55VCM208ASTN40 | 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM | Toshiba Semiconductor | | |
| STN4346 | STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. | Stanson Technology | | |
| STN4392 | STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. | Stanson Technology | | |
| STN4402_V1 | N Channel Enhancement Mode MOSFET | List of Unclassifed Manufacturers | | |
| STN4412 | N Channel Enhancement Mode MOSFET | Stanson Technology | | |
| STN4412S8RG | N Channel Enhancement Mode MOSFET | Stanson Technology | | |
| STN4412S8TG | N Channel Enhancement Mode MOSFET | Stanson Technology | | |
| STN4416 | STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. | Stanson Technology | | |
| STN4426 | STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. | Stanson Technology | | |
| STN4438 | STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. | Stanson Technology | | |
| STN4440 | STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. | Stanson Technology | | |
| STN4480 | STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. | Stanson Technology | | |
| STN4488L | STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. | Stanson Technology | | |
| BSTN44C60 | BSTN6113 | List of Unclassifed Manufacturers | | |
| BSTN44C80 | BSTN6113 | List of Unclassifed Manufacturers | | |
| BSTN44C86 | BSTN6113 | List of Unclassifed Manufacturers | | |
| STN4526 | STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. | Stanson Technology | | |
