| Компонент | Описание | Производитель | PDF | Buy |
| NTE36 | Silicon Complementary Transistors AF Power Amplifier, High Current Switch | NTE Electronics |  |  |
| ICTE36 | UNI-AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DE PORTECTION UNI- ET BIDIRECTIONNELLES | STMicroelectronics | | |
| NTE360 | Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz | NTE Electronics | | |
| NTE361 | Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz | NTE Electronics | | |
| TE3610AS | TE01d Dielectric Resonators & Materials | Token Electronics Industry Co., Ltd. | | |
| TE3610AW | TE01d Dielectric Resonators & Materials | Token Electronics Industry Co., Ltd. | | |
| TE3610BS | TE01d Dielectric Resonators & Materials | Token Electronics Industry Co., Ltd. | | |
| TE3610BW | TE01d Dielectric Resonators & Materials | Token Electronics Industry Co., Ltd. | | |
| NTE362 | Silicon NPN Transistor RF Power | NTE Electronics | | |
| NTE363 | Silicon NPN Transistor RF Power Amp, PO = 4W | NTE Electronics | | |
| NTE365 | Silicon NPN Transistor RF Power Output PO = 15W @ 512MHz | NTE Electronics | | |
| NTE366 | Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz | NTE Electronics | | |
| NTE367 | Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz | NTE Electronics | | |
| NTE368 | Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz | NTE Electronics | | |
| NTE369 | Silicon NPN Transistor TV Vertical Deflection, Switch | NTE Electronics | | |
| ICTE36C | UNI-AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DE PORTECTION UNI- ET BIDIRECTIONNELLES | STMicroelectronics | | |
| KQ0603TTE36N | highQinductor | KOA Speer Electronics, Inc. | | |
| KQ0603TTE36N | Chip Inductors | KOA Speer Electronics, Inc. | | |
| STE36N50 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE | STMicroelectronics | | |
| STE36N50-DA | N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE | STMicroelectronics | | |
