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| TIM1213-5 DATASHEET | |
Компонент | Описание | Производитель | PDF | Buy |
TIM1213-5 | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| *TIM1*: Расширенные результаты | |
Компонент | Описание | Производитель | PDF | Buy |
TIM1011-10L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1011-15L | P1dB=42.0dBm at 10.7GHz to 11.7GHz | Toshiba Semiconductor | | |
TIM1011-2L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1011-4L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1011-5L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1011-8L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1112-15L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1112-2 | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1112-4 | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1112-8 | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1213-15L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1213-4L | Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) | Toshiba Semiconductor | | |
TIM1213-5 | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1314-30L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1314-30L_09 | HIGH POWER P1dB=45.0dBm at 13.75GHz to 14.5GHz | Toshiba Semiconductor | | |
TIM1414-10LA-252 | HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz | Toshiba Semiconductor | | |
TIM1414-18L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1414-18L-252 | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
TIM1414-2-252 | HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz | Toshiba Semiconductor | | |
TIM1414-30L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
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