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| TIM7785-30SL_06 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
TIM7785-30SL_06 | MICROWAVE POWER GaAs FET | Toshiba Semiconductor |  |  |
| *TIM7785-*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| TIM7785-12UL_09 | HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz | Toshiba Semiconductor | | |
| TIM7785-16SL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM7785-16UL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM7785-25UL | HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz | Toshiba Semiconductor | | |
| TIM7785-30SL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM7785-30SL_06 | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM7785-35SL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM7785-35SL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM7785-35SL_06 | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM7785-45SL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM7785-4UL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM7785-4UL_09 | HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz | Toshiba Semiconductor | | |
| TIM7785-60SL_08 | IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level | Toshiba Semiconductor | | |
| TIM7785-6UL_09 | HIGH POWER P1dB=38.5dBm at 7.7GHz to 8.5GHz | Toshiba Semiconductor | | |
| TIM7785-8UL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor | | |
| TIM7785-8UL_06 | HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz | Toshiba Semiconductor | | |
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