| Компонент | Описание | Производитель | PDF | Buy |
| AQV252 | HE (High-function Economy) Type [1-Channel (Form A) Type] | Nais(Matsushita Electric Works) |  |  |
| 1SV252 | DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS) | Toshiba Semiconductor | | |
| 1SV252 | VHF~UHF Band RF Attenuator Applications | Toshiba Semiconductor | | |
| 1SV252 | VHF~UHF Band RF Attenuator Applications | Guangdong Kexin Industrial Co.,Ltd | | |
| XR17V252 | 66 MHZ PCI BUS DUAL UART WITH POWER MANAGEMENT SUPPORT | Exar Corporation | | |
| XR17V252 | 66 MHZ PCI BUS DUAL UART WITH POWER MANAGEMENT SUPPORT | Exar Corporation | | |
| S-1701V2520-M5T1G | HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR WITH RESET FUNCTION | Seiko Instruments Inc | | |
| S-1701V2520-U5T1G | HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR WITH RESET FUNCTION | Seiko Instruments Inc | | |
| LV25200M | Bi-CMOS IC Single chip Tuner IC for Car Radio | Sanyo Semicon Device | | |
| LV25200M | Single chip Tuner IC for Car Radio | Sanyo Semicon Device | | |
| LV25200M_10 | Single chip Tuner IC for Car Radio | Sanyo Semicon Device | | |
| V2520SM | Ultra Low phase noise VCO with built-in buffer amplifier | BOWEI Integrated Circuits CO.,LTD. | | |
| V2520TO | Ultra Low phase noise VCO with built-in buffer amplifier | BOWEI Integrated Circuits CO.,LTD. | | |
| S-1701V2521-M5T1G | HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR WITH RESET FUNCTION | Seiko Instruments Inc | | |
| S-1701V2521-U5T1G | HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR WITH RESET FUNCTION | Seiko Instruments Inc | | |
| S-1701V2522-M5T1G | HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR WITH RESET FUNCTION | Seiko Instruments Inc | | |
| S-1701V2522-U5T1G | HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR WITH RESET FUNCTION | Seiko Instruments Inc | | |
| MGFS48V2527 | 2.5 - 2.7GHz BAND 60W GaAs FET | Mitsubishi Electric Semiconductor | | |
| MGFS48V2527 | 2.5 - 2.7GHz BAND 60W GaAs FET | Mitsubishi Electric Semiconductor | | |
| MGFS45V2527 | 2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET | Mitsubishi Electric Semiconductor | | |
