Компонент | Описание | Производитель | PDF | Buy |
RN731VTE-17 | PIN diode | Rohm | | |
VTE-205A | Through hole VC-TCXO Clipped sine wave Low phase noise | QUARTZCOM the communications company | | |
VTE-205A3 | Through hole VC-TCXO Clipped sine wave Low phase noise | QUARTZCOM the communications company | | |
VTE-205A5 | Through hole VC-TCXO Clipped sine wave Low phase noise | QUARTZCOM the communications company | | |
VTE-205H | Through hole VC-TCXO HCMOS / TTL compatible Tight frequency stability vs. temperature | QUARTZCOM the communications company | | |
VTE-205H3 | Through hole VC-TCXO HCMOS / TTL compatible Tight frequency stability vs. temperature | QUARTZCOM the communications company | | |
VTE-205H5 | Through hole VC-TCXO HCMOS / TTL compatible Tight frequency stability vs. temperature | QUARTZCOM the communications company | | |
VTE-205S | Through hole VC-TCXO Sine wave Frequency range up to 200 MHz | QUARTZCOM the communications company | | |
VTE-205S3 | Through hole VC-TCXO Sine wave Frequency range up to 200 MHz | QUARTZCOM the communications company | | |
VTE-205S5 | Through hole VC-TCXO Sine wave Frequency range up to 200 MHz | QUARTZCOM the communications company | | |
EM488M1644VTE-6F | 128Mb (2M‡4Bank‡16) Synchronous DRAM | Eorex Corporation | | |
EM48AM1684VTE-6F | 256Mb (4M‡4Bank‡16) Synchronous DRAM | Eorex Corporation | | |
EM481M1644VTE-6FE | 128Mb (2M‡4Bank‡16) Synchronous DRAM | Eorex Corporation | | |
EM482M1644VTE-6FE | 128Mb (2M‡4Bank‡16) Synchronous DRAM | Eorex Corporation | | |
EM484M1644VTE-6FE | 128Mb (2M‡4Bank‡16) Synchronous DRAM | Eorex Corporation | | |
EM488M1644VTE-6FE | 128Mb (2M‡4Bank‡16) Synchronous DRAM | Eorex Corporation | | |
EM48AM1644VTE-6FE | 128Mb (2M‡4Bank‡16) Synchronous DRAM | Eorex Corporation | | |
EM48BM1644VTE-6FE | 128Mb (2M‡4Bank‡16) Synchronous DRAM | Eorex Corporation | | |
EM48AM1684VTE-6FE | 256Mb (4M‡4Bank‡16) Synchronous DRAM | Eorex Corporation | | |
EM48AM1684VTE-75F | 256Mb (4M‡4Bank‡16) Synchronous DRAM | Eorex Corporation | | |