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| W10NK60Z DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
W10NK60Z | N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET | STMicroelectronics |  |  |
| *W10N*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| RW10N | coat insulated miniature precision power wirewound resistors | KOA Speer Electronics, Inc. | | |
| UMW10N | High transition frequency (dual transistors) | Rohm | | |
| MTW10N100E | TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM | Motorola, Inc | | |
| MTW10N40E | TMOS E-FET POWER FIELD EFFECT TRANSISTOR | Motorola, Inc | | |
| PHW10N40E | 400 V, power MOS transistor avalanche energy rated | NXP Semiconductors | | |
| AOW10N60 | 600V,10A N-Channel MOSFET | Alpha & Omega Semiconductors | | |
| SGW10N60 | Fast IGBT in NPT-technology | Infineon Technologies AG | | |
| HFW10N60 | 600V N-Channel MOSFET | SemiHow Co.,Ltd. | | |
| SGW10N60A | Fast IGBT in NPT-technology | Infineon Technologies AG | | |
| SGW10N60A | Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation | Infineon Technologies AG | | |
| SKW10N60A | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
| SKW10N60A | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | | |
| SSW10N60B | 600V N-Channel MOSFET | Fairchild Semiconductor | | |
| PHW10N60E | 600 V, power MOS transistor avalanche energy rated | NXP Semiconductors | | |
| PHW10N60E | 600 V, power MOS transistor avalanche energy rated | NXP Semiconductors | | |
| SGW10N60RUF | Short Circuit Rated IGBT | Fairchild Semiconductor | | |
| SGW10N60RUFD | Short Circuit Rated IGBT | Fairchild Semiconductor | | |
| SW10N65 | N-channel MOSFET | Xian Semipower Electronic Technology Co., Ltd. | | |
| AOW10N65 | 650V,10A N-Channel MOSFET | Alpha & Omega Semiconductors | | |
| WFW10N80 | N-Channel MOSFET | Wisdom technologies Int`l | | |
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