| Компонент | Описание | Производитель | PDF | Buy |
| FW503 | DC / DC Converter Applications | Sanyo Semicon Device |  |  |
| 3266W503 | 7.2‡6.7 Square/Multiturn/Trimming Potentiometer | DB Lectro Inc | | |
| 3296W503 | 10‡9.5 Square/Multiturn/Trimming Potentiometer | DB Lectro Inc | | |
| 3323W503 | 7‡7 Square/ Single Turn /Trimming Potentiometer | DB Lectro Inc | | |
| 3362W503 | 7‡7.2 Square/Single Turn/Trimming Potentiometer | DB Lectro Inc | | |
| 3386W503 | 9.6‡9.6 Square/ Single Turn /Trimming Potentiometer | DB Lectro Inc | | |
| DBCTDF1WW503 | D TYPE CONNECTORS - TURNED PIN WIRE WRAP | Dubilier | | |
| DBCTDF2WW503 | D TYPE CONNECTORS - TURNED PIN WIRE WRAP | Dubilier | | |
| DBCTDM1WW503 | D TYPE CONNECTORS - TURNED PIN WIRE WRAP | Dubilier | | |
| DBCTDM2WW503 | D TYPE CONNECTORS - TURNED PIN WIRE WRAP | Dubilier | | |
| S30MS01GP25BAW503 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | | |
| S30MS01GP25BFW503 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | | |
| S30MS01GP25TAW503 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | | |
| S30MS01GP25TFW503 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | | |
| S30MS512P25BAW503 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | | |
| S30MS512P25TAW503 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | | |
| S30MS512P25TFW503 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | | |
| S30MS512P25BFW503 | 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology | SPANSION | | |
| MIW5030 | 10W, Wide Input Range DIP, Single & Dual Output DC/DC Converters | Minmax Technology Co., Ltd. | | |
| MKW5030 | 25 - 30 Watts 2:1 Wide Input Range DC/DC Converters | Total Power International | | |
