| Компонент | Описание | Производитель | PDF | Buy |
| BLW98 | UHF linear power transistor | NXP Semiconductors |  |  |
| BLW98 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor | | |
| BYW98 | HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES | STMicroelectronics | | |
| BYW98-100S | SUPER FAST RECOVERY DIODES | EIC discrete Semiconductors | | |
| BYW98-200 | HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES | Shenzhen Taychipst Electronic Co., Ltd | | |
| BYW98-200 | High Efficiency Fast Recovery Rectifier Diodes | Shenzhen Luguang Electronic Technology Co., Ltd | | |
| BYW98-200RL | HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES | STMicroelectronics | | |
| BYW98-200S | SUPER FAST RECOVERY DIODES | EIC discrete Semiconductors | | |
| W981208AH | 4M x 8 bit x 4 Banks SDRAM | Winbond | | |
| W981208BH | 4M x 4 BANKS x 8 BIT SDRAM | Winbond | | |
| W981216 | 2M x 4 BANKS x 16 BIT SDRAM | Winbond | | |
| W981216 | 2M x 16 bit x 4 Banks SDRAM | Winbond | | |
| W981216AH | 2M x 16 bit x 4 Banks SDRAM | Winbond | | |
| W981216BH | 2M x 4 BANKS x 16 BIT SDRAM | Winbond | | |
| W9812G2GB | 1M ‡ 4 BANKS ‡ 32BITS SDRAM | Winbond | | |
| W9812G2GB-6 | 1M ‡ 4 BANKS ‡ 32BITS SDRAM | Winbond | | |
| W9812G2GB-6I | 1M ‡ 4 BANKS ‡ 32BITS SDRAM | Winbond | | |
| W9812G2GB-75 | 1M ‡ 4 BANKS ‡ 32BITS SDRAM | Winbond | | |
| W9812G2GH | a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words ‡ 4 banks ‡ 32 bits | Winbond | | |
| W9812G2GH-6 | a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words ‡ 4 banks ‡ 32 bits | Winbond | | |
