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| BUJ105AB |
Silicon Diffused Power Transistor |
NXP Semiconductors |
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BUJ105AB Datasheet
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Постоянная ссылка на эту страницу |
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BUJ105AB и другие |
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| Компонент | Описание | Производитель | PDF |
| BAR74 |
Silicon Switching Diode |
Infineon Technologies AG |
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| 0459844463 |
1.27mm (.050"), 12.00mm (.472") Pitch, EXTreme LPHPower Receptacle Header, Right Angle, 4 Power Contacts, 32 Signal Contacts, Select Gold (Au) Plating |
Molex Electronics Ltd. |
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| 0459844433 |
1.27mm (.050"), 12.00mm (.472") Pitch, EXTreme LPHPower Receptacle Header,Right Angle, 4 Power Contacts, 20 Signal Contacts, Select Gold (Au) Plating, for 1.57mm (.062") Thick PC Board |
Molex Electronics Ltd. |
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| 4040LX103J7 |
HIGH VOLTAGE CAPACITORS MONOLITHIC CERAMIC TYPE |
Semtech Corporation |
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| 0459844452 |
1.27mm (.050"), 12.00mm (.472") Pitch, EXTreme LPHPower Receptacle HeaderRight Angle, 4 Power Contacts, 28 Signal Contacts, Select Gold (Au) Plating, for |
Molex Electronics Ltd. |
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