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| CY7C1168V18-333BZI |
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress Semiconductor |
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CY7C1168V18-333BZI Datasheet
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CY7C1168V18-333BZI и другие |
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| Компонент | Описание | Производитель | PDF |
| 592D158X_6R3X2_25H |
Solid Tantalum Chip Capacitors TANTAMOUNT^, Low Profile, Conformal Coated, Maximum CV |
Vishay Siliconix |
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| 1SS336_07 |
Ultra High Speed Switching Application |
Toshiba Semiconductor |
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| 066X122U063GJ2 |
Standard, Axial Leaded, Aluminum |
List of Unclassifed Manufacturers |
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| AM29LVI16D |
16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
Advanced Micro Devices |
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| AM29N323DT11AWKI |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
Advanced Micro Devices |
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