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| CY7C1392KV18_12 |
18-Mbit DDR II SIO SRAM Two-Word Burst Architecture |
Cypress Semiconductor |
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CY7C1392KV18_12 Datasheet
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Постоянная ссылка на эту страницу |
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CY7C1392KV18_12 и другие |
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| Компонент | Описание | Производитель | PDF |
| 0757576221 |
3.50mm (.138") Pitch, MX150 Header, Breakaway, Vertical, 4 Circuits, 1.25lm (50l")Nickel (Ni) Overall, 2.50lm (100l") Minimum Select Matte Tin (Sn) Plating on Tail, |
Molex Electronics Ltd. |
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| 2SA1451A-YF |
High-Speed, High-Current Switching Applications |
Toshiba Semiconductor |
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| AM4TW-2412D |
4 watt dc-dc converters |
AIMTEC |
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| 0757576201 |
3.50mm (.138) Pitch, MX150 Header, Breakaway, Vertical, 20 Circuits, 1.25lm (50l) Nickel (Ni) Overall, 2.50lm (100l) Minimum Select Matte Tin (Sn) Plating on Tail |
Molex Electronics Ltd. |
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| 2SA1451 |
Silicon PNP Power Transistors |
Quanzhou Jinmei Electronic Co.,Ltd. |
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