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Ïîèñê Datasheets |
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| NTLJD3183CZ |
Power MOSFET 20 V/−20 V, 4.7 A/−4.0 A, lCool Complementary, 2x2 mm, WDFN Package |
ON Semiconductor |
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NTLJD3183CZ Datasheet
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Ïîñòîÿííàÿ ññûëêà íà ýòó ñòðàíèöó |
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NTLJD3183CZ è äðóãèå |
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| Êîìïîíåíò | Îïèñàíèå | Ïðîèçâîäèòåëü | PDF |
| K4C89183AF-AIFB |
288Mb x18 Network-DRAM2 Specification |
Samsung semiconductor |
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| M400420S2PJ |
9x14 mm, 5.0 or 3.3 Volt, PECL, VCSO |
MTRONPTI |
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| EM625FS16BT-70LL |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM |
Emerging Memory & Logic Solutions Inc |
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| IRFP250 |
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) |
International Rectifier |
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| MOX750761006FE |
Precision Thick Film Axial Terminal High Voltage/High Resistance |
Ohmite Mfg. Co. |
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