Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package

ON Semiconductor

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon

International Rectifier

60 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz

Microsemi Corporation

2-Cell Lithium-Ion Secondary Battery Protection IC

Sanyo Semicon Device

128K x16 bit Low Power and Low Voltage Full CMOS Static RAM

Emerging Memory & Logic Solutions Inc

SC70, Single/Dual Low-Voltage, Low-Power lP Reset Circuits

Maxim Integrated Products