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MH4V644AXJJ-6 |
FAST PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM |
Mitsubishi Electric Semiconductor |
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MH4V644AXJJ-6 Datasheet
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MH4V644AXJJ-6 и другие |
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Компонент | Описание | Производитель | PDF |
Y0023120R500T |
Hermetically Sealed High Precision Bulk Metal^ Foil Technology Resistors with TCR of a 2 ppm/`C, Tolerance of a 0.001 % and |
Vishay Siliconix |
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Y0023120R500D |
Hermetically Sealed High Precision Bulk Metal^ Foil Technology Resistors with TCR of a 2 ppm/`C, Tolerance of a 0.001 % and |
Vishay Siliconix |
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PWR70 |
3 WATTS UNREGULATED |
Murata Power Solutions Inc. |
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Y0023120R500U |
Hermetically Sealed High Precision Bulk Metal^ Foil Technology Resistors with TCR of a 2 ppm/`C, Tolerance of a 0.001 % and |
Vishay Siliconix |
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KSE800 |
Monolithic Construction With Built-in Base-Emitter Resistors |
Fairchild Semiconductor |
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