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Поиск Datasheets |
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3GS14G-D-80N-25.000 Datasheet
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3GS14G-D-80N-25.000 и другие |
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Компонент | Описание | Производитель | PDF |
B82422-A3821-+ |
Size 1210 (EIA) or 3225 (IEC) Rated inductance 0,0082 to 100 mH Rated current 65 to 700 mA |
EPCOS |
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BSS84V |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes Incorporated |
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DL-5320-1625-VTS |
1625 nm DFB LASER DIODE MODULE UNCOOLED MQW DFB LD WITH PIGTAIL |
Optoway Technology Inc |
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AM28F512-200EI |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
Advanced Micro Devices |
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B82422-A3821-+100 |
Size 1210 (EIA) or 3225 (IEC) Rated inductance 0,0082 to 100 uH Rated current 65 to 800 mA |
EPCOS |
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