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1SS226T5LFT |
Ultra High Speed Switching Application |
Toshiba Semiconductor |
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1SS226T5LFT Datasheet
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18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
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Seating Occupancy Reed Switch Sensor Features and Benefits |
HAMLIN Position and Movement Sensor Solutions |
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18-Mbit QDR-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) |
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Silicon NPN Power Transistors |
Inchange Semiconductor Company Limited |
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AM29LV800DB-70SD |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
Advanced Micro Devices |
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