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0702800445 |
2.54mm (.100") Pitch C-Grid^ Breakaway Header, Dual Row, Vertical, HighTemperature, 94 Circuits, Tin (Sn) Plating, 2.72mm (.107") PC Tail Length |
Molex Electronics Ltd. |
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0702800445 Datasheet
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0702800445 и другие |
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Компонент | Описание | Производитель | PDF |
0702800439 |
2.54mm (.100") Pitch C-Grid Breakaway Header, Dual Row, Vertical, High Temperature, 82 Circuits |
Molex Electronics Ltd. |
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BZX68B9V1 |
Silicon Epitaxial Planar Z-Diodes |
Shenzhen Ping Sheng Electronics Co., Ltd. |
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BZX61B4V7 |
Silicon Epitaxial Planar Z-Diodes |
Shenzhen Ping Sheng Electronics Co., Ltd. |
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CY7C1315BV18-278BZXC |
18-Mbit QDR-II SRAM 4-Word Burst Architecture |
Cypress Semiconductor |
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2N6387_06 |
Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS |
ON Semiconductor |
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