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595D106XO010A2W |
Solid Tantalum Chip Capacitors TANTAMOUNT^ Conformal Coated, Maximum CV |
Vishay Siliconix |
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595D106XO010A2W Datasheet
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595D106XO010A2W и другие |
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Компонент | Описание | Производитель | PDF |
2N6483 |
N-CHANNEL JFET |
Intersil Corporation |
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0702871214 |
2.54mm (.100") Pitch C-Grid Header, Breakaway, Dual Row, Vertical, with Retention Pin, 40 Circuits |
Molex Electronics Ltd. |
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0702871201 |
2.54mm (.100") Pitch C-Grid Header, Breakaway, Dual Row, Vertical, with Retention Pin, 14 Circuits, 6.10mm |
Molex Electronics Ltd. |
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CY7C1319CV18-300BZXC |
18-Mbit DDR-II SRAM 4-Word Burst Architecture |
Cypress Semiconductor |
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BZX79-B8V2 |
Voltage regulator diodes |
NXP Semiconductors |
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