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| 2N6487 |
SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS |
New Jersey Semi-Conductor Products, Inc. |
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2N6487 Datasheet
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Постоянная ссылка на эту страницу |
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2N6487 и другие |
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| Компонент | Описание | Производитель | PDF |
| AM2D-2418DH30Z |
2 Watt | DC-DC Converter |
AIMTEC |
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| 0702871225 |
2.54mm (.100") Pitch C-Grid^ Header, Breakaway, Dual Row, Vertical, with RetentionPin, 62 Circuits, 6.10mm (.240") Mating Pin Length, 0.76lm (30l") Gold (Au) Selective |
Molex Electronics Ltd. |
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| CY7C1319CV18-300BZXI |
18-Mbit DDR-II SRAM 4-Word Burst Architecture |
Cypress Semiconductor |
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| 0702871218 |
2.54mm (.100") Pitch C-Grid^ Header, Breakaway, Dual Row, Vertical, with RetentionPin, 48 Circuits, 6.10mm (.240") Mating Pin Length, 0.76lm (30l") Gold (Au) Selective |
Molex Electronics Ltd. |
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| 1W04G |
SINGLE PHASE 1.0 AMP. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
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