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| JAN1N5803US |
MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP |
Microsemi Corporation |
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JAN1N5803US Datasheet
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JAN1N5803US и другие |
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| Компонент | Описание | Производитель | PDF |
| JAN1N5802US |
MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP |
Microsemi Corporation |
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| HB52R649E1U-A6B |
512 MB Registered SDRAM DIMM 64-Mword ‡ 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M ‡ 4 Components) PC100 SDRAM |
Elpida Memory |
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| IDT53ALVCH16823PA |
3.3V CMOS 18-BIT BUS-INTERFACE FLIPFLOP WITH 3-STATE OUTPUTS AND BUS-HOLD |
Integrated Device Technology |
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| E-L4973D3.3 |
3.5A step down switching regulator |
STMicroelectronics |
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| L51240F |
Low Profile Designed for PCB Connections |
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