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Поиск Datasheets |
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| GE08P20 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
GTM CORPORATION |
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GE08P20 Datasheet
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Постоянная ссылка на эту страницу |
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GE08P20 и другие |
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| Компонент | Описание | Производитель | PDF |
| 70280-0493 |
2.54mm (.100") Pitch C-Grid^ Breakaway Header, Dual Row, Vertical, HighTemperature, 90 Circuits, 0.76lm (30l") Gold (Au) Selective Plating, Tin (Sn) PC Tail |
Molex Electronics Ltd. |
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| HC49US-HF1318-20.000 |
2 Lead Metal Package Quartz Crystal, 4.7 mm x 11 mm |
ILSI America LLC |
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| L800BB70VF |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
Advanced Micro Devices |
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| MILS1812-152K |
Shielded Surface Mount Inductors |
API Delevan |
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| LPX271M450E4P3 |
85 ЉC Radial Snap-In Aluminum Electrolytic Capacitors High Voltage, High Value Radial Leaded Snap-In |
Cornell Dubilier Electronics |
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