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Поиск Datasheets |
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K4B1G0446G |
1Gb G-die DDR3 SDRAM |
Samsung semiconductor |
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K4B1G0446G Datasheet
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K4B1G0446G и другие |
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Компонент | Описание | Производитель | PDF |
MDRC1641511JD04 |
Resistor/Capacitor Networks, Dual-In-Line, Molded DIP, 16 Pin |
Vaishali Semiconductor |
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P6SMB6.8A |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER |
Pan Jit International Inc. |
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IRFP048N |
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A) |
International Rectifier |
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MDRC1641511SD04 |
Resistor/Capacitor Networks, Dual-In-Line, Molded DIP, 16 Pin |
Vishay Siliconix |
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NTHS4166N |
Power MOSFET 30 V, 8.2 A, Single N-Channel, ChipFET Package |
ON Semiconductor |
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