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K4B2G0446C |
DDR3 SDRAM Memory |
Samsung semiconductor |
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K4B2G0446C Datasheet
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K4B2G0446C и другие |
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Компонент | Описание | Производитель | PDF |
MOX400231006PE |
Precision Thick Film Axial Terminal High Voltage/High Resistance |
Ohmite Mfg. Co. |
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NTJD2152PT4G |
Trench Small Signal MOSFET |
ON Semiconductor |
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PIC16F887-E/MLQTP |
28/40/44-Pin, Enhanced Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology |
Microchip Technology |
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HF100-12_1 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
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LV358L-S08-R |
GENERAL PURPOSE, LOW VOLTAGE, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS |
Unisonic Technologies |
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