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| NTLJD3181PZTBG |
Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Package |
ON Semiconductor |
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NTLJD3181PZTBG Datasheet
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| Êîìïîíåíò | Îïèñàíèå | Ïðîèçâîäèòåëü | PDF |
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DC/DC Converter IC |
Sanyo Semicon Device |
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Samsung semiconductor |
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Bi-CMOS IC For cell phone system Power supply |
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Hongfa Technology |
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288Mb x18 Network-DRAM2 Specification |
Samsung semiconductor |
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