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K4E660412E-JP50 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out |
Samsung semiconductor |
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K4E660412E-JP50 Datasheet
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K4E660412E-JP50 и другие |
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Компонент | Описание | Производитель | PDF |
LV5781 |
Bi-CMOS IC 3A, Point-of-load, Chopper-type Step-down Converter |
Sanyo Semicon Device |
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HF105-1L018D-1DT |
MINIATURE HIGH POWER RELAY |
Hongfa Technology |
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K4E641612C-TL50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung semiconductor |
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HF105-1L018D-1HT |
MINIATURE HIGH POWER RELAY |
Hongfa Technology |
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MP018S-SM |
Quartz Crystal |
CTS Corporation |
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