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Поиск Datasheets |
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K4H560838E-VC/LB3 |
256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) |
Samsung semiconductor |
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K4H560838E-VC/LB3 Datasheet
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K4H560838E-VC/LB3 и другие |
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Компонент | Описание | Производитель | PDF |
HF105F-5L005DT1DTFXXX |
MINIATURE HIGH POWER RELAY |
Hongfa Technology |
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NV23KASDC10V |
Withstands high temperature, operating under 105 ambient temperature |
DB Lectro Inc |
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M470L2923BN0-CLCC |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung semiconductor |
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K4H560838E-ZLB0 |
256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
Samsung semiconductor |
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MAX6502UKN030-T |
Low-Cost, 2.7V to 5.5V, Micropower Temperature Switches in SOT23 and TO-220 |
Maxim Integrated Products |
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