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| K6R1004V1D-KC10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung semiconductor |
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K6R1004V1D-KC10 Datasheet
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K6R1004V1D-KC10 и другие |
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| Компонент | Описание | Производитель | PDF |
| K6R1004V1D-KI08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung semiconductor |
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| K6R1004V1D-JI08 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung semiconductor |
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| NX8563LB557-CA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
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| IRKT92/10AS90 |
ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
International Rectifier |
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| M5-256/192-7VI |
Fifth Generation MACH Architecture |
Lattice Semiconductor |
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