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| K6R1016V1D-EI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung semiconductor |
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K6R1016V1D-EI10 Datasheet
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K6R1016V1D-EI10 и другие |
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| Компонент | Описание | Производитель | PDF |
| P80C51UFPN |
80C51 8-bit microcontroller family 4K/128 OTP/ROM/ROMless low voltage 2.7V.5.5V, low power, high speed 33 MHz |
NXP Semiconductors |
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| MAX708CUA-TG |
UP Supervisory Circuits |
ON Semiconductor |
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| K6R1016V1D-JC10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung semiconductor |
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| NX8564LE870-BC |
NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS |
California Eastern Labs |
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| PIC18F1230-E/SOSQTP |
18/20/28-Pin, Enhanced Flash Microcontrollers with nanoWatt Technology, High-Performance PWM and A/D |
Microchip Technology |
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