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| K6R4016C1D-EI10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung semiconductor |
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K6R4016C1D-EI10 Datasheet
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K6R4016C1D-EI10 и другие |
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| Компонент | Описание | Производитель | PDF |
| HF140FF/006-2ZSWTFXXX |
MINIATURE INTERMEDIATE POWER RELAY |
Hongfa Technology |
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| NX8566LE912-CC |
NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS |
California Eastern Labs |
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| K6R4016C1D-EC10 |
1Mx4 Bit High Speed Static RAM(5.0V Operating) |
Samsung semiconductor |
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| MEH23ZAX-R |
8 pin DIP, 5.0 Volt, ECL, PECL, Clock Oscillators |
MTRONPTI |
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| M5-320/160-20YI |
Fifth Generation MACH Architecture |
Lattice Semiconductor |
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