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NAND04GR4B2DN1E |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories |
Numonyx B.V |
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NAND04GR4B2DN1E Datasheet
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NAND04GR4B2DN1E и другие |
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Компонент | Описание | Производитель | PDF |
MAX9776ETJ+ |
2 x 1.5W, Stereo Class D Audio Subsystem with DirectDrive Headphone Amplifier |
Maxim Integrated Products |
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NAND04GW4B2DN1E |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories |
Numonyx B.V |
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HVY5P201K2KV5B1 |
High Voltage Ceramic Capacitors 500V-4KV |
MERITEK ELECTRONICS CORPORATION |
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MG150Q1JS40 |
N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS) |
Toshiba Semiconductor |
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PXO-P9-3DS-6P |
SMD Clock Oscillator LVDS Output frequency up to 320 MHz |
QUARTZCOM the communications company |
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