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NE552R479A-T1A-A |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET |
California Eastern Labs |
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NE552R479A-T1A-A Datasheet
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NE552R479A-T1A-A и другие |
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Компонент | Описание | Производитель | PDF |
M24C16-FCS6TP/S |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial IbC bus EEPROM |
STMicroelectronics |
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M24C16-FCT6TP/S |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial IbC bus EEPROM |
STMicroelectronics |
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MBR2150VG-G1 |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
BCD Semiconductor Manufacturing Limited |
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PLVA2656A |
Low-voltage avalanche regulator double diodes |
NXP Semiconductors |
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NE552R679A |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
NEC |
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