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| IRG4BC10SD-L |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) |
International Rectifier |
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IRG4BC10SD-L Datasheet
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IRG4BC10SD-L и другие |
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| Компонент | Описание | Производитель | PDF |
| TC58DAM82A1FT00 |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM |
Toshiba Semiconductor |
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| TC58128AFT |
128-MBIT (16M ‡ 8 BITS) CMOS NAND E2PROM |
Toshiba Semiconductor |
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| MAX350 |
Serially Controlled, Low-Voltage, 8-Channel/Dual 4-Channel Multiplexers |
Maxim Integrated Products |
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| PE30MLFJ204MLB |
Fully Sealed Container Cermet Potentiometer Military and Professional Grade |
Vishay Siliconix |
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| MAX349CWN |
Serially Controlled, Low-Voltage, 8-Channel/Dual 4-Channel Multiplexers |
Maxim Integrated Products |
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