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Поиск Datasheets |
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MGFS52BN2122A |
2.1-2.2 GHz BAND 160W GaAs FET |
Mitsubishi Electric Semiconductor |
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MGFS52BN2122A Datasheet
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MGFS52BN2122A и другие |
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Компонент | Описание | Производитель | PDF |
KM416S1120DT-GF6 |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
Samsung semiconductor |
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KM416S1120DT-GFC |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
Samsung semiconductor |
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KM416S4030CT-FH |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung semiconductor |
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MGFS45V2325A |
2.3-2.5 GHz BAND / 32W |
Mitsubishi Electric Semiconductor |
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Y-CONC-UA46P-CUCU-2002-E |
IP67/68/69K Protected Components |
Yamaichi Electronics Co., Ltd. |
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