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Поиск Datasheets |
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| Q62702-G117 |
GaAs HEMT For low noise front end amplifiers up to 20 GHz |
Infineon Technologies AG |
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Q62702-G117 Datasheet
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Постоянная ссылка на эту страницу |
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Q62702-G117 и другие |
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| Компонент | Описание | Производитель | PDF |
| Y117212K7560D0W |
High Precision Foil Wraparound Surface Mount Chip Resistor with TCR of a 2 ppm/`C and Load Life Stability of a 0.01 % (100 ppm) |
Vishay Siliconix |
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| HF9310-005M23 |
HALF-SIZE CRYSTAL CAN HERMETICALLY SEALED RELAY WITH ESTABLISHED RELIABILITY |
Hongfa Technology |
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| Q62702-G38 |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens Semiconductor Group |
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| Y117212K7560D9R |
High Precision Foil Wraparound Surface Mount Chip Resistor with TCR of a 2 ppm/`C and Load Life Stability of a 0.01 % (100 ppm) |
Vishay Siliconix |
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| HF9310-005M23II |
HALF-SIZE CRYSTAL CAN HERMETICALLY SEALED RELAY WITH ESTABLISHED RELIABILITY |
Hongfa Technology |
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