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NE5820M53 |
P-channel MOS Field Effect Transistor for Impedance Converter of Microphone |
Renesas Technology Corp |
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NE5820M53 Datasheet
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NE5820M53 и другие |
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Компонент | Описание | Производитель | PDF |
HDSP-333Y-HJ200 |
7.62 mm (0.3 inch) General Purpose Seven-Segment Display |
Agilent(Hewlett-Packard) |
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NE592D14 |
Video Amplifier |
ON Semiconductor |
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M13S2561616A-6BG |
4M x 16 Bit x 4 Banks Double Data Rate SDRAM |
Elite Semiconductor Memory Technology Inc. |
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CM400HB-90H |
Single IGBTMOD HVIGBT 400 Amperes/4500 Volts |
Powerex Power Semiconductors |
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NE602AFE |
DOUBLE BALANCED MIXER AND OSCILLATOR |
NXP Semiconductors |
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