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| NAND256R4A2BN1F |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
STMicroelectronics |
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NAND256R4A2BN1F Datasheet
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Постоянная ссылка на эту страницу |
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NAND256R4A2BN1F и другие |
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| Компонент | Описание | Производитель | PDF |
| Y0014150R000C19L |
Bulk Metal^ Foil Technology Tubular Axial-Lead Resistors, Meets or Exceed MIL-R-39005 Requirements |
Vishay Siliconix |
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| HSCSNBD160MGSA3 |
TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1% total Error band,Analog output,SIP,60 mbar to,10 bar |
Honeywell Solid State Electronics Center |
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| HSCSNBN006BC3A3 |
TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1% total Error band,Analog output,SIP,60 mbar to,10 bar |
Honeywell Solid State Electronics Center |
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| HSCSNND001PDAB3 |
TruStability silicon Pressure Sensors: HSC Series-High Accuracy -1% total Error band,Analog output,SIP,1 psi to 150 psi |
Honeywell Solid State Electronics Center |
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| NAND08GR4B4CZL6F |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories |
Numonyx B.V |
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