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Поиск Datasheets |
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NAND02GW3B2DN6E |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories |
Numonyx B.V |
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NAND02GW3B2DN6E Datasheet
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NAND02GW3B2DN6E и другие |
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Компонент | Описание | Производитель | PDF |
NAND02GR4B2CN6F |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
Numonyx B.V |
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TM1062FVA |
MILITARY/AEROSPACE PRODUCTS |
Pulse A Technitrol Company |
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N25Q128A23BF8A0G |
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface |
Numonyx B.V |
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N25Q128A11BF8A0E |
128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface |
Numonyx B.V |
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NAND04GR3B4CZL1F |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories |
Numonyx B.V |
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