|
Поиск Datasheets |
|
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung semiconductor |
|
|
K4E171612D-J Datasheet
|
|
|
|
Постоянная ссылка на эту страницу |
|
|
K4E171612D-J и другие |
|
Компонент | Описание | Производитель | PDF |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung semiconductor |
|
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung semiconductor |
|
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung semiconductor |
|
K4E171612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung semiconductor |
|
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung semiconductor |
|
| |
|
Datasheet's на KAZUS.RU |
|
• 10.000.000 компонентов
• 300.000 поисковых запросов
• 500.000 закачек PDF в месяц
• 700.000 пользователей
|
|
Реклама на сайте |
|
|
|
|
|