![](/forums/images/ca_evo_db/misc/spacer.gif) |
Поиск Datasheets |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung semiconductor |
![](/images/pdf_icon.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
K4E151612D-T Datasheet
|
![](/forums/images/ca_evo_db/misc/spacer.gif) |
|
![](/forums/images/ca_evo_db/misc/spacer.gif) |
Постоянная ссылка на эту страницу |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
K4E151612D-T и другие |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung semiconductor |
![](/images/pdf_icon.png) |
K4F171611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung semiconductor |
![](/images/pdf_icon.png) |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung semiconductor |
![](/images/pdf_icon.png) |
K4F171612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung semiconductor |
![](/images/pdf_icon.png) |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung semiconductor |
![](/images/pdf_icon.png) |
| ![](/images/ru/clear.gif) |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
Datasheet's на KAZUS.RU |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
• 10.000.000 компонентов
• 300.000 поисковых запросов
• 500.000 закачек PDF в месяц
• 700.000 пользователей
|
![](/forums/images/ca_evo_db/misc/spacer.gif) |
Реклама на сайте |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
|
|
|
|