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K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung semiconductor |
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K4E160411D-B Datasheet
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Постоянная ссылка на эту страницу |
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K4E160411D-B и другие |
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Компонент | Описание | Производитель | PDF |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung semiconductor |
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K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung semiconductor |
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K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung semiconductor |
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K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung semiconductor |
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K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung semiconductor |
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