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Поиск Datasheets |
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K4F640412D-TC/L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung semiconductor |
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K4F640412D-TC/L Datasheet
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K4F640412D-TC/L и другие |
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Компонент | Описание | Производитель | PDF |
K4F660812D-JC/L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung semiconductor |
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K4F640812D-JC/L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung semiconductor |
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K4F660812D-TC/L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung semiconductor |
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K4F640812D-TC/L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung semiconductor |
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KM416RD8AC-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung semiconductor |
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Datasheet's на KAZUS.RU |
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