![](/forums/images/ca_evo_db/misc/spacer.gif) |
Поиск Datasheets |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
IRFSL31N20D |
HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A |
International Rectifier |
![](/images/pdf_icon.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
IRFSL31N20D Datasheet
|
![](/forums/images/ca_evo_db/misc/spacer.gif) |
|
![](/forums/images/ca_evo_db/misc/spacer.gif) |
Постоянная ссылка на эту страницу |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
IRFSL31N20D и другие |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF |
IRFS31N20D |
HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A |
International Rectifier |
![](/images/pdf_icon.png) |
IRFS59N10D |
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A |
International Rectifier |
![](/images/pdf_icon.png) |
IRG4BC20 |
Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A |
International Rectifier |
![](/images/pdf_icon.png) |
IRG4BC40 |
Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A |
International Rectifier |
![](/images/pdf_icon.png) |
IRG4PC50 |
Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.45V @ VGE = 15V, IC = 39A |
International Rectifier |
![](/images/pdf_icon.png) |
| ![](/images/ru/clear.gif) |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
Datasheet's на KAZUS.RU |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
• 10.000.000 компонентов
• 300.000 поисковых запросов
• 500.000 закачек PDF в месяц
• 700.000 пользователей
|
![](/forums/images/ca_evo_db/misc/spacer.gif) |
Реклама на сайте |
![](/forums/images/ca_evo_db/misc/spacer.gif) |
|
|
|
|