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| NTE5890 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. |
NTE Electronics |
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NTE5890 Datasheet
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Постоянная ссылка на эту страницу |
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NTE5890 и другие |
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| Компонент | Описание | Производитель | PDF |
| NTE5871 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. |
NTE Electronics |
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| NTE5873 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. |
NTE Electronics |
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| NTE5875 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. |
NTE Electronics |
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| NTE5877 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. |
NTE Electronics |
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| NTE5881 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. |
NTE Electronics |
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