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W6NRD0X-0000
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Cree, Inc
W6NRD0X-0000 Datasheet
W6NRD0X-0000 - Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition by CREE
Название/Part No:W6NRD0X-0000
Описание/Description:Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Производитель/Maker:Cree, Inc (CREE)
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W6NRE0X-0000
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Cree, Inc
1.5KE6.8.0A
5.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
MDE Semiconductor, Inc.
1.5KE6.8.0A
5.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
MDE Semiconductor, Inc.
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17.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE Semiconductor, Inc.
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18.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
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