| Компонент | Описание | Производитель | PDF | Buy |
| 06151612 | tyco electronics contents | Tyco Electronics |  |  |
| 0923151612 | Picoflex PF-50 IDT-to-IDT, 16 Circuits, 0.12m (4.72") Length | Molex Electronics Ltd. | | |
| MAL215161221E3 | Aluminum Capacitors Radial Long-Life, High Voltage | Vishay Siliconix | | |
| MAL215161229E3 | Aluminum Capacitors Radial Long-Life, High Voltage | Vishay Siliconix | | |
| 1516125B3 | StarLEDs T2 (7x20mm) BA7s with half wave rectifier | Chicago Miniature Lamp,inc | | |
| 1516125UG3 | StarLEDs T2 (7x20mm) BA7s with half wave rectifier | Chicago Miniature Lamp,inc | | |
| 1516125UR3 | StarLEDs T2 (7x20mm) BA7s with half wave rectifier | Chicago Miniature Lamp,inc | | |
| 1516125UY3 | StarLEDs T2 (7x20mm) BA7s with half wave rectifier | Chicago Miniature Lamp,inc | | |
| 1516125W3 | StarLEDs T2 (7x20mm) BA7s with half wave rectifier | Chicago Miniature Lamp,inc | | |
| 1516125W3D | StarLEDs T2 (7x20mm) BA7s with half wave rectifier | Chicago Miniature Lamp,inc | | |
| 1516125XXX | StarLEDs T2 (7x20mm) BA7s with half wave rectifier | Chicago Miniature Lamp,inc | | |
| K4E151612D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| K4F151612D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode | Samsung semiconductor | | |
| K4E151612D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F151612D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
| K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
| K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
| K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F151612D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
| K4F151612D-T | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. | Samsung semiconductor | | |
