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| GT10J311 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
GT10J311 | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |  |  |
| *GT10J3*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| GT10J301 | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor | | |
| GT10J301_06 | HIGH POWER SWITCHING APPLICATIONS | Toshiba Semiconductor | | |
| GT10J303 | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor | | |
| GT10J303 | SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS | Toshiba Semiconductor | | |
| GT10J303_06 | SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS | Toshiba Semiconductor | | |
| GT10J311 | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor | | |
| GT10J312 | N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor | | |
| GT10J312 | SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS | Toshiba Semiconductor | | |
| GT10J312_06 | SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS | Toshiba Semiconductor | | |
| GT10J321 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT | Toshiba Semiconductor | | |
| GT10J321 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | | |
| GT10J321_06 | Silicon N Channel IGBT High Power Switching Applications | Toshiba Semiconductor | | |
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