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| JP520S DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
JP520S | Pico Xinger 20dB Directional Coupler | Anaren Microwave |  |  |
| *JP5*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| 527248JP5 | EMI/RFI Shield Sock Backshell with Strain-Relief and 30 Cable Entries | Glenair, Inc. | | |
| 527249JP5 | EMI/RFI Shield Sock Backshell with Strain-Relief | Glenair, Inc. | | |
| 527277JP5 | Feed Through Backshell Assembly & Adapters for Size 2 ARINC 600 Series Connectors | Glenair, Inc. | | |
| 527-025JP5 | Strain Relief Backshell | Glenair, Inc. | | |
| 527-047JP5 | Multi-Function Backshell | Glenair, Inc. | | |
| 527-056JP5 | EMI/RFI Strain-Relief Backshell | Glenair, Inc. | | |
| 527-108JP5 | EMI/RFI Banding Backshell | Glenair, Inc. | | |
| AD7008JP50 | CMOS DDS Modulator | Analog Devices | | |
| K4E640412E-JP50 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| K4E660412E-JP50 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out | Samsung semiconductor | | |
| RJP5001APP | Nch IGBT for Strobe Flash | Renesas Technology Corp | | |
| RJP5001APP-00-T2 | Nch IGBT for Strobe Flash | Renesas Technology Corp | | |
| 100B47JP500X | N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor, Inc | | |
| 100A100JP500X | Gallium Arsenide PHEMT RF Power Field Effect Transistor | Freescale Semiconductor, Inc | | |
| 100B220JP500X | N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor, Inc | | |
| 100B240JP500X | N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor, Inc | | |
| 100B101JP500X | Gallium Arsenide PHEMT RF Power Field Effect Transistor | Freescale Semiconductor, Inc | | |
| 100B120JP500X | RF LDMOS Wideband Integrated Power Amplifiers | Freescale Semiconductor, Inc | | |
| 100B390JP500X | N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor, Inc | | |
| 100B121JP500X | N-Channel Enhancement-Mode Lateral MOSFETs | Freescale Semiconductor, Inc | | |
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